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R
SEMICONDUCTOR
C PR G
EGP30A THRU EGP30M
SUPER FAST RECTIFIER
Reverse Voltage: 50 to 400 Volts Forward Current:3.0Amperes
SILICON RECTIFIER
Units
FEATURES
GPRC( Glass Passivated Rectifier Chip) inside Glass passivated cavity-free junction
JF
DO-201AD
Low forward voltage drop,High current capability High surge current capability Super fast recovery time Plastic package has Underwriters Laboratory Flammability Classification 94V-0
1.0(25.4) MIN 0.210(5.3) 0.190(4.8) DIA 0.375(9.50) 0.285(7.20)
MECHANICAL DATA
Case: JEDEC DO-201AD molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750,method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.042ounce, 1.18 grams 0.052(1.32) 0.048(1.22) DIA
1.0(25.4) MIN
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,60HZ,resistive or inductive load. For capacitive load, derate current by 20%.)
Symbols Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current 0.375"(9.5mm)lead Length at Ta=55 C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage at 1.0 A Maximum DC Reverse Current At Rated DC Blocking Voltage TA=25 C TA=100 C EGP 30A 50 35 50 EGP 30B 100 70 100 EGP 30D 200 140 200 EGP 30F 300 210 300 3.0 EGP 30G 400 280 400 EGP 30J 600 420 600 EGP 30K 800 480 800 EGP 30M 1000 700 1000
VRRM VRMS VDC I(AV) IFSM VF IR
Volts Volts Volts Amp
115.0 1.0 5.0 1.25
105.0 1.7
Amps Volts A
100
Maximum Reverse Recovery Time(Note1) Typical Junction Capacitance(Note2) Operating Junction and Storage Temperature Range
Trr CJ TJ TSTG
50 75 -65 to+125 -65 to+150
75
ns PF C
Note: 1.Test conditions: IF=0.5A,IR=1.0A,IRR=0.25A.
2.Measured at 1MHZ and applied reverse voltage of 4.0 Volts.
8-20
JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096 WWW.JIFUSEMICON.COM
RATINGS AND CHARACTERISTIC CURVES EGP30A THRU EGP30M
FIG.1-TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
10 NON INDUCTIVE
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
50 NON INDUCTIVE
+0.5A
Trr
() 50Vdc (APPROX) (-)
D.U.T.
PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE1)
0 -0.25A
1 NON INDUCTIVE
NOTES:1.Rise Time=7ns max. input impedance=1 megohm 22pF 2.Rise Time=10ns max. source impedance =50 ohms
-1.0A
1cm
SET TIME BASE FOR 5/10 ns/cm
3.0 2.5 2.0 1.5 1.0 0.5 00 2550 75100 25 50 1 1 175
EGP30A-EGP30G EGP30J-EGP30M
Single Phase Half Wave 60hz Resistive or Inductive Load 0.375"(9.5mm) Lead Length
AVERAGE FORWARD CURRENT (A)
AMBIENT TEMPERATURE ( C)
FIG.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
FIG.4-TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT( AMPERES)
10 EGP30A-EGP30F EGP30G EGP30J-EGP30M 1
INSTANTANEOUS REVERSE CURRENT ,(mA)
100
10
TJ=100 C
1.0
0.1
TA=25 C Pulse Width=300 s 1% Duty Cycle
0.1
TJ=25 C
0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.01 INSTANTANEOUS FORWARD V OLTAGE (VOL TS) 0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLT AGE(%)
FIG.5-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
140 120
FIG.6-TYPICAL JUNCTION CAPACITANCE
200 JUNCTION CAPACITANCE(pF)
175 150 125 100 75 50 25 1 0.1 0.5 1 2 5 10 20 50 100
PEAK FORWARD SURGE CURRENT(AMPERES)
100 80 60 40 20 0 1 5 10 EGP30A-EGP30G EGP30J-EGP30M
TA=25 C 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method)
50
100
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE. (V)
8-21
JINAN JINGHENG CO., LTD. NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096 WWW.JIFUSEMICON.COM
SILICON RECTIFIER

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